Semiconductor device structure and method for forming the same

ABSTRACT

A semiconductor device structure is provided. The semiconductor device structure includes a fin structure formed over a substrate, and a gate structure formed over the fin structure. The gate structure includes a first layer, and a fill layer over the first layer. The gate structure includes a protection layer formed over the fill layer of the gate structure, and the protection layer is separated from the first layer by the fill layer.

CROSS REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of U.S. Provisional Application No.63/151,195 filed on Feb. 19, 2021, the entirety of which is incorporatedby reference herein.

BACKGROUND

Semiconductor devices are used in a variety of electronic applications,such as personal computers, cell phones, digital cameras, and otherelectronic equipment. Semiconductor devices are typically fabricated bysequentially depositing insulating or dielectric layers, conductivelayers, and semiconductive layers of material over a semiconductorsubstrate, and patterning the various material layers using lithographyto form circuit components and elements thereon. Many integratedcircuits are typically manufactured on a single semiconductor wafer, andindividual dies on the wafer are singulated by sawing between theintegrated circuits along a scribe line. The individual dies aretypically packaged separately, in multi-chip modules, for example, or inother types of packaging.

As the semiconductor industry has progressed into nanometer technologyprocess nodes in pursuit of higher device density, higher performance,and lower costs, challenges from both fabrication and design issues haveresulted in the development of three-dimensional designs.

Although existing semiconductor devices have generally been adequate fortheir intended purposes, they have not been entirely satisfactory in allrespects.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It shouldbe noted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1A-1K show perspective representations of various stages offorming a semiconductor device structure, in accordance with someembodiments of the disclosure.

FIG. 2A shows a cross-sectional representation of the semiconductordevice structure along line AA′ shown in FIG. 1I, in accordance withsome embodiments of the disclosure.

FIG. 2B shows a cross-sectional representation of the semiconductordevice structure along line BB′ shown in FIG. 1I, in accordance withsome embodiments of the disclosure.

FIG. 3A shows a cross-sectional representation of the semiconductordevice structure along line AA′ shown in FIG. 1J, in accordance withsome embodiments of the disclosure.

FIG. 3B shows a cross-sectional representation of the semiconductordevice structure along line BB′ shown in FIG. 1J, in accordance withsome embodiments of the disclosure

FIG. 4A shows a cross-sectional representation of the semiconductordevice structure along line AA′ shown in FIG. 1K, in accordance withsome embodiments of the disclosure.

FIG. 4B shows a cross-sectional representation of the semiconductordevice structure along line BB′ shown in FIG. 1K, in accordance withsome embodiments of the disclosure.

FIGS. 5A-5K show cross-sectional representations of various stages offorming the semiconductor device structure, in accordance with someembodiments of the disclosure.

FIGS. 6A-6C show cross-sectional representations of various stages offorming a semiconductor device structure, in accordance with someembodiments of the disclosure.

FIGS. 7A-7E show cross-sectional representations of various stages offorming the semiconductor device structure, in accordance with someembodiments of the disclosure.

FIGS. 8A-8I show cross-sectional representations of various stages offorming a semiconductor device structure, in accordance with someembodiments of the disclosure.

FIGS. 9A-9E show cross-sectional representations of various stages offorming a semiconductor device structure, in accordance with someembodiments of the disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the subject matterprovided. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Some variations of the embodiments are described. Throughout the variousviews and illustrative embodiments, like reference numbers are used todesignate like elements. It should be understood that additionaloperations can be provided before, during, and after the method, andsome of the operations described can be replaced or eliminated for otherembodiments of the method.

The gate all around (GAA) transistor structures described below may bepatterned by any suitable method. For example, the structures may bepatterned using one or more photolithography processes, includingdouble-patterning or multi-patterning processes. Generally,double-patterning or multi-patterning processes combine photolithographyand self-aligned processes, allowing patterns to be created that have,for example, pitches smaller than what is otherwise obtainable using asingle, direct photolithography process. For example, in one embodiment,a sacrificial layer is formed over a substrate and patterned using aphotolithography process. Spacers are formed alongside the patternedsacrificial layer using a self-aligned process. The sacrificial layer isthen removed, and the remaining spacers may then be used to pattern theGAA structure.

Embodiments for forming a semiconductor device structure are provided.FIGS. 1A-1K show perspective representations of various stages offorming a semiconductor device structure 100 a, in accordance with someembodiments of the disclosure. The semiconductor device structure 100 ais a gate all around (GAA) transistor structure. In some otherembodiments, the semiconductor device structure 100 a is a FinFET devicestructure, a fin structure is formed over a substrate. The gatestructure 150 (shown in FIG. 5H) is formed over the fin structure.

As shown in FIG. 1A, a substrate 102 is provided, in accordance withsome embodiments. The substrate 102 may be made of silicon or othersemiconductor materials. Alternatively or additionally, the substrate102 may include other elementary semiconductor materials such asgermanium. In some embodiments, the substrate 102 is made of a compoundsemiconductor such as silicon carbide, gallium arsenic, indium arsenide,or indium phosphide. In some embodiments, the substrate 102 is made ofan alloy semiconductor such as silicon germanium, silicon germaniumcarbide, gallium arsenic phosphide, or gallium indium phosphide. In someembodiments, the substrate 102 includes an epitaxial layer. For example,the substrate 102 has an epitaxial layer overlying a bulk semiconductor.

A number of first semiconductor layers 104 and a number of secondsemiconductor layers 106 are sequentially alternately formed over thesubstrate 102. The semiconductor layers 104 and 106 are verticallystacked to form a stacked nanowire structure (or stackednanostructures).

In some embodiments, the first semiconductor layers 104 and the secondsemiconductor layers 106 independently include silicon (Si), germanium(Ge), silicon germanium (Si_(1-x)Gex, 0.1<x<0.7, the value x is theatomic percentage of germanium (Ge) in the silicon germanium), indiumarsenide (InAs), indium gallium arsenide (InGaAs), indium antimonide(InSb), or another applicable material. In some embodiments, the firstsemiconductor layer 104 and the second semiconductor layer 106 are madeof different materials.

The first semiconductor layers 104 and the second semiconductor layers106 are made of different materials having different lattice constant.In some embodiments, the first semiconductor layer 104 is made ofsilicon (Si), and the second semiconductor layer 106 is made of silicongermanium (Si_(1-x)Gex, 0.1<x<0.7). In some other embodiments, the firstsemiconductor layer 104 is made of silicon germanium (Si_(1-x)Gex,0.1<x<0.7), and the second semiconductor layer 106 is made of silicon(Si).

In some embodiments, the first semiconductor layers 104 and the secondsemiconductor layers 106 are formed by a selective epitaxial growth(SEG) process, a chemical vapor deposition (CVD) process (e.g.low-pressure CVD (LPCVD), plasma enhanced CVD (PECVD)), a molecularepitaxy process, or another applicable process. In some embodiments, thefirst semiconductor layers 104 and the second semiconductor layers 106are formed in-situ in the same chamber.

In some embodiments, the thickness of each of the first semiconductorlayers 104 is in a range from about 1.5 nanometers (nm) to about 20 nm.Terms such as “about” in conjunction with a specific distance or sizeare to be interpreted as not to exclude insignificant deviation from thespecified distance or size and may include for example deviations of upto 20%. In some embodiments, the first semiconductor layers 104 aresubstantially uniform in thickness. In some embodiments, the thicknessof each of the second semiconductor layers 106 is in a range from about1.5 nm to about 20 nm. In some embodiments, the second semiconductorlayers 106 are substantially uniform in thickness.

Next, as shown in FIG. 1B, the first semiconductor layers 104 and thesecond semiconductor layers 106 are patterned to form a fin structure110, in accordance with some embodiments.

Afterwards, as shown in FIG. 1C, an isolation structure 114 is formedover the substrate 102, in accordance with some embodiments. Theisolation structure 114 may be a shallow trench isolation (STI)structure surrounding the fin structure 110. The top portion of the finstructure 110 is above the isolation structure 114. A lower portion ofthe fin structure 110 is surrounded by the isolation structure 114, andan upper portion of the fin structure 110 protrudes from the isolationstructure 114.

Next, as shown in FIG. 1D, a dummy gate dielectric layer 116 is formedover the fin structure 110, and then a dummy gate electrode layer 118 isformed on the dummy gate dielectric layer 116, in accordance with someembodiments. Afterwards, the dummy gate dielectric layer 116 and thedummy gate electrode layer 118 are patterned by a patterning process.The dummy gate structure 120 is constructed by the dummy gate dielectriclayer 116 and the dummy gate electrode layer 118.

The patterning process includes a photolithography process and anetching process. The photolithography process includes photoresistcoating (e.g., spin-on coating), soft baking, mask aligning, exposure,post-exposure baking, developing the photoresist, rinsing and drying(e.g., hard baking). The etching process includes a dry etching processor a wet etching process.

The dummy gate electrode layer 118 is formed to partially cover and toextend across the fin structure 110. In some embodiments, the dummy gateelectrode layer 118 wraps around the fin structure 110. The dummy gatedielectric layer 116 may be made of or include silicon oxide. In someembodiments, the dummy gate dielectric layers 116 is formed by adeposition process, such as chemical vapor deposition (CVD) process,physical vapor deposition (PVD) process, atomic layer deposition (ALD)process, another applicable process, or a combination thereof.

In some embodiments, the dummy gate electrode layer 118 is made ofpolycrystalline-silicon (poly-Si) or poly-crystalline silicon-germanium(poly-SiGe). In some embodiments, the dummy gate electrode layer 118 isformed by a deposition process, such as chemical vapor deposition (CVD)process, physical vapor deposition (PVD) process, atomic layerdeposition (ALD) process, another applicable process, or a combinationthereof.

Afterwards, as shown in FIG. 1E, a gate spacer layer 124 is formed onopposite sidewall surfaces of the dummy gate electrode layer 118 andover the dummy gate dielectric layer 116, in accordance with someembodiments. The gate spacer layer 124 can provide more protection tothe dummy gate structure 120 during subsequent processes.

In some embodiments, the gate spacer layer 124 is made of a dielectricmaterial, such as silicon oxide (SiO₂), silicon nitride (SiN), siliconcarbide (SiC), silicon oxynitride (SiON), silicon carbon nitride (SiCN),silicon oxide carbonitride (SiOCN), or a combination thereof. In someembodiments, the gate spacer layer 124 is formed by a depositionprocess, such as chemical vapor deposition (CVD) process, physical vapordeposition (PVD) process, atomic layer deposition (ALD) process, anotherapplicable process, or a combination thereof.

Next, as shown in FIG. 1F, a portion of the first semiconductor layers104 is removed to form an S/D trench 129, in accordance with someembodiments. The S/D trench 129 is between two adjacent secondsemiconductor layers 106.

Next, another portion of the first semiconductor layers 104 directlybelow the gate spacer layer 124 is removed to form a cavity (not shown),and the cavity is exposed by the S/D trench 129. Afterwards, an innerspacer layer 136 is formed in the cavity. The inner spacer layer 136 isdirectly below the gate spacer layer 124. The inner spacer layer 136 isused to be as a barrier between an S/D structure 138 (formed later, FIG.1G) and a gate structure 150 (formed later, as shown in FIG. 1K). Theinner spacer layer 136 can reduce the parasitic capacitance between theS/D structure 138 (formed later, FIG. 1G) and the gate structure 150(formed later, as shown in FIG. 1K).

Afterwards, as shown in FIG. 1F, a S/D structure 138 is formed in theS/D trench 129, in accordance with some embodiments. The S/D structure138 is in direct contact with the inner spacer layer 136.

The S/D structure 138 may include silicon germanium (SiGe), indiumarsenide (InAs), indium gallium arsenide (InGaAs), indium antimonide(InSb), gallium arsenide (GaAs), gallium antimonide (GaSb), indiumaluminum phosphide (InAlP), indium phosphide (InP), or a combinationthereof. The S/D structure 138 may doped with one or more dopants. Insome embodiments, the S/D structure 138 is silicon (Si) doped withphosphorus (P), arsenic (As), antimony (Sb), or another applicabledopant. Alternatively, the S/D structure 138 is silicon germanium (SiGe)doped with boron (B) or another applicable dopant.

In some embodiments, the S/D structure 138 is formed by an epitaxy orepitaxial (epi) process. The epi process may include a selectiveepitaxial growth (SEG) process, CVD deposition techniques (e.g.,vapor-phase epitaxy (VPE) and/or ultra-high vacuum CVD (UHV-CVD)),molecular beam epitaxy, or other suitable epi processes.

Next, as shown in FIG. 1H, a contact etch stop layer (CESL) 140 isformed over the S/D structures 138, and an inter-layer dielectric (ILD)layer 142 is formed over the CESL 140, in accordance with someembodiments. Next, a portion of the ILD layer 142 is removed to exposethe top surface of the dummy gate electrode layer 118. In someembodiments, the portion of the ILD layer 142 is removed by aplanarizing process, a chemical mechanical polishing (CMP) process.

In some embodiments, the CESL 140 is made of silicon nitride, siliconoxynitride, and/or other applicable materials. The CESL 140 may beformed by a plasma enhanced chemical vapor deposition (CVD) process, lowpressure CVD process, atomic layer deposition (ALD) process, or anotherapplicable processes.

The ILD layer 142 may include multilayers made of multiple dielectricmaterials, such as silicon oxide, silicon nitride, silicon oxynitride,phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), low-kdielectric material, and/or other applicable dielectric materials.Examples of low-k dielectric materials include, but are not limited to,fluorinated silica glass (FSG), carbon doped silicon oxide, amorphousfluorinated carbon, parylene, bis-benzocyclobutenes (BCB), or polyimide.The ILD layer 142 may be formed by a chemical vapor deposition (CVD)process, physical vapor deposition (PVD) process, atomic layerdeposition (ALD) process, spin-on coating process, or other applicableprocesses.

Afterwards, as shown in FIG. 1I, the dummy gate structure 120 is removedto form a trench 143 in the ILD layer 142, in accordance with someembodiments. The dummy gate dielectric layer 116 and the dummy gateelectrode layer 118 are removed by an etching process, such as a dryetching process or a wet etching process.

FIG. 2A shows a cross-sectional representation of the semiconductordevice structure along line AA′ shown in FIG. 1I, in accordance withsome embodiments of the disclosure. FIG. 2B shows a cross-sectionalrepresentation of the semiconductor device structure along line BB′shown in FIG. 1I, in accordance with some embodiments of the disclosure.

As shown in FIGS. 2A and 2B, the first semiconductor layers 104 and thesecond semiconductor layers 106 are exposed by the trench 143.

Afterwards, as shown in FIG. 1J, the first semiconductor layers 104 areremoved to form a number of gaps 145, in accordance with someembodiments of the disclosure. Each of the gaps 145 is formed betweentwo adjacent second semiconductor layers 106. Since the firstsemiconductor layers 104 and the second semiconductor layers 106 aremade of different materials, they have different etching selectivity.Therefore, the first semiconductor layers 104 are removed, but thesecond semiconductor layers 106 are left.

The remaining second semiconductor layers 106 are used to as channelregion of the semiconductor device structure 100 a. In some embodiments,the second semiconductor layers 106 may be referred to as“nanostructures”, “nanowires”, or “nanosheets”. Therefore, the first finstructure 110 includes a number of nanostructures stacked in a verticaldirection.

FIG. 3A shows a cross-sectional representation of the semiconductordevice structure along line AA′ shown in FIG. 1J, in accordance withsome embodiments of the disclosure. FIG. 3B shows a cross-sectionalrepresentation of the semiconductor device structure along line BB′shown in FIG. 1J, in accordance with some embodiments of the disclosure.

As shown in FIGS. 3A and 3B, the gaps 145 are between two adjacentsecond semiconductor layers 106, and the gaps 145 are exposed by thetrench 143.

Next, as shown in FIG. 1K, a gate dielectric layer 152, a first layer154, a second layer 156 and a fill layer 158 are formed in the trench143 and gaps 145, in accordance with some embodiments of the disclosure.A gate structure 150 is constructed by the gate dielectric layer 152,the first layer 154 and the second layer 156 and the fill layer 158.Next, a protection layer 160 is formed on the fill layer 158, and aninsulating layer 162 is formed over the protection layer 160. The firstlayer 154 and the second layer 156 are made of different materials. Thefirst layer 154, the second layer 156 and the fill layer 158 are made ofdifferent materials. The insulating layer 162 includes a protrudingportion in direct contact with the gate dielectric layer 152.

FIG. 4A shows a cross-sectional representation of the semiconductordevice structure along line AA′ shown in FIG. 1K, in accordance withsome embodiments of the disclosure. FIG. 4B shows a cross-sectionalrepresentation of the semiconductor device structure along line BB′shown in FIG. 1K, in accordance with some embodiments of the disclosure.

As shown in FIGS. 4A and 4B, the first layer 154 has a U-shapedstructure, and the second layer 156 is formed over the first layer 154.The fill layer 158 is separated from the first layer 152 by the secondlayer 154, and the protection layer 160 is separated from the firstlayer 152 by the second layer 154 and the fill layer 158. The protectionlayer 160 is selectively formed on the fill layer 158 and the secondlayer 154, but not on the gate dielectric layer 152.

FIGS. 5A-5K show cross-sectional representations of various stages offorming the semiconductor device structure 100 a, in accordance withsome embodiments of the disclosure. FIG. 5A shows an enlarged region Aof FIG. 3B, in accordance with some embodiments of the disclosure. FIGS.5A-5K show the detail processes for forming the gate structure 150 inthe trench 143 and gaps 145.

As shown in FIG. 5A, the gate dielectric layer 152 is formed in thetrench 143 and on the gate spacer layer 124. The trench 143 is notcompletely filled with the gate dielectric layer 152.

In some embodiments, the gate dielectric layer 152 is a high-kdielectric layer. In some embodiments, the high-k gate dielectric layeris made of one or more layers of a dielectric material, such as HfO₂,HfSiO, HfSiON, HfTaO, HfTiO, HfZrO, zirconium oxide, aluminum oxide,titanium oxide, hafnium dioxide-alumina (HfO₂—Al₂O₃) alloy, anothersuitable high-k dielectric material, or a combination thereof. In someembodiments, the gate dielectric layer 152 is formed by using a chemicalvapor deposition (CVD) process, physical vapor deposition (PVD) process,atomic layer deposition (ALD) process, another applicable process, or acombination thereof.

Next, as shown in FIG. 5B, the first layer 154 is formed over the gatedielectric layer 152, in accordance with some embodiments of thedisclosure. The first layer 154 is conformally formed in the trench 143.

The first layer 154 is a conductive layer. The first layer 154 may be asingle layer or a multiple layer. In some embodiments, the first layer154 comprises a n-work function material. In some embodiments, the firstlayer 154 comprises a Si-containing material, a Al-containing material,or a combination thereof. In some embodiments, the Si-containingmaterial is made of TiSiN, TiSiC, TiSiAlC or a combination thereof. Insome embodiments, the Al-containing material is made of TiAlC, TaAlC,TiSiAlC, TiAlN, AlN or a combination thereof. In some embodiments, thefirst layer 154 is formed by using chemical vapor deposition (CVD)process, physical vapor deposition (PVD) process, atomic layerdeposition (ALD) process, another applicable method, or a combinationthereof.

Afterwards, as shown in FIG. 5C, a dummy layer 153 is formed over thefirst layer 154 and in the trench 143, in accordance with someembodiments of the disclosure. The trench 143 is completely filled withthe gate dielectric layer 152, the first layer 154 and the dummy layer153.

The dummy layer 153 is used to protect the underlying layers. In someembodiments, the dummy layer 153 is made of Spin-on-Glass (SOG),Spin-on-Carbon (SOC), anti-reflective coating (ARC), another applicablematerial, or a combination thereof. In some embodiments, the dummy layer153 is formed by using a chemical vapor deposition (CVD) process,physical vapor deposition (PVD) process, atomic layer deposition (ALD),another applicable process, or a combination thereof.

Afterwards, as shown in FIG. 5D, a portion of the dummy layer 153 isremoved, in accordance with some embodiments of the disclosure. As aresult, a portion of the first layer 154 is exposed. In someembodiments, the portion of the dummy layer 153 is removed by an etchingprocess, such as a wet etching process or a dry etching process.

Afterwards, as shown in FIG. 5E, a portion of the first layer 154 isremoved to expose a portion of the gate dielectric layer 152 by usingthe remaining dummy layer 153 as a mask, in accordance with someembodiments of the disclosure. The remaining first layer 154, which iscovered by the dummy layer 153, is not removed. The top surface of thefirst layer 154 is lower than the top surface of the gate spacer layer124.

Next, as shown in FIG. 5F, the dummy layer 153 is removed, in accordancewith some embodiments of the disclosure. In some embodiments, the dummylayer 153 is removed by an etching process, such as a wet etchingprocess or a dry etching process. As a result, the first layer 154 has aU-shaped structure.

The trench 153 has a first depth D₁. In some embodiments, the firstdepth D₁ is in a range from about 30 nm to about 200 nm. The remainingfirst layer 154 has a second depth D₂. In some embodiments, the seconddepth D₂ is in a range from about 1 nm to about 10 nm.

Next, as shown in FIG. 5G, the second layer 156 is formed over the firstlayer 154 and in the trench 143, and the fill layer 158 is formed overthe second layer 156 and the gate spacer layer 124, in accordance withsome embodiments of the disclosure. Next, a portion of the second layer156 and a portion of the fill layer 158 outside of the trench 143 areremoved by a planarizing process, a chemical mechanical polishing (CMP)process.

The second layer 156 is a conductive layer. The second layer 156 may bea single layer or a multiple layer. In some embodiments, the secondlayer 156 comprises a p-work function material. In some embodiments, thesecond layer 156 is made of TiN, TaN, WCN, WSi, Ti, Ni, Co or acombination thereof. In some embodiments, the second layer 156 is formedby using a chemical vapor deposition (CVD) process, physical vapordeposition (PVD) process, atomic layer deposition (ALD) process, anotherapplicable process, or a combination thereof.

The fill layer 158 is also a conductive layer. The fill layer 158 may bea single layer or a multiple layer. In some embodiments, the fill layer158 is made of aluminum, copper, titanium, tantalum, tungsten, cobalt,molybdenum, tantalum nitride, nickel silicide, cobalt silicide, TiN, WN,TiAl, TiAlN, TaCN, TaC, TaSiN, metal alloys, another suitable material,or a combination thereof. In some embodiments, the filling layer 158 isformed by using chemical vapor deposition (CVD) process, physical vapordeposition (PVD) process, atomic vapor deposition (ALD) process,electroplating, another applicable method, or a combination thereof.

Next, as shown in FIG. 5H, a portion of the gat dielectric layer 152, aportion of the second layer 156 and a portion of the fill layer 158 areremoved, in accordance with some embodiments of the disclosure. As aresult, the top surface of the fill layer 158 is lower than the topsurface of the gate spacer layer 124. In some embodiments, the topsurface of the fill layer 158 is substantially level with the topsurface of the second layer 156 and the top surface of the gatedielectric layer 152. The fill layer 158 has a T-shaped structure.

The portion of the gat dielectric layer 152, the portion of the secondlayer 156 and the portion of the fill layer 158 are removed by anetching process, such as a wet etching process or a dry etching process.

There is a third depth D₃ which is measured from the top surface of thesecond layer 156 to the top surface of the first layer 154. In someembodiments, the third depth D₃ is in a range from about 1 nm to about20 nm.

Next, as shown in FIG. 5I, the protection layer 160 is formed on thefill layer 158 and on the second layer 156, in accordance with someembodiments of the disclosure. The protection layer 160 is formed on theexposed top surface of the fill layer 158 and the exposed top surface ofthe second layer 156. The top surface of the second layer 156 is indirect contact with the bottom surface of the protection layer 160. Thetop surface of the fill layer 158 is in direct contact with the bottomsurface of the protection layer 160. The fill layer 158 is surrounded bythe second layer 156 and the protection layer 160.

The surface treatment process is used to activate the top surface of thefill layer 158 and the second layer 156. In some embodiments, thesurface treatment process includes using hydrogen (H₂) gas. Whenhydrogen (H₂) gas is used, the native metal oxide on top surface of thelayer 158 and top surface of the second layer 156 are removed and thenformed hydrogen radicals on the top surface. Meanwhile, the dielectricgate spacer layer 124 is not reacted with hydrogen. Hence, the hydrogenradicals are selectively formed on the top surface of the fill layer 158and the second layer 156 to facilitate the formation of the protectionlayer 160.

Next, the protection layer 160 is formed by a deposition process. Thedeposition process includes supplying a precursor only on the topsurface of the fill layer 158 and on the top surface of the second layer156, but not on dielectric gate spacer layer 124. In some embodiments,the precursor includes tungsten (W)-containing material, such astungsten hexafluoride (WF₆) or tungsten hexachloride (WCl₆). Theprecursor reacts with the hydrogen radicals to form the protection layer160.

The protection layer 160 is used as an etching stop layer to protect theunderlying layers. In addition, the protection layer 160 has a low gateresistance (Rg). If the protection layer 160 is too thin or is not wellformed, the protection effect is not good enough.

It should be noted that the protection layer 160 is selectively formedon conductive material (such as the fill layer 158 and the second layer156), but not formed on the insulating material (e.g. the gatedielectric layer 152). In some embodiments, the first layer 154 includesa Si-containing material, a Al-containing material, or a combinationthereof. In some embodiments, the protection layer 160 is not formed onthe first layer 154 since the material of the first layer 154 is easilyto oxidize to become insulating (e.g. metal oxide layer).

Since the protection layer 160 is not formed on the first layer 154, ifthe first layer 154 is exposed after the process of FIG. 5H, and theexposed first layer will be etched or damaged by the subsequent etchingprocesses (for forming an opening to form an contact structure). Thefirst layer 154 is not exposed and is covered by the second layer 156and the fill layer 158. The formation quality of the protection layer160 is improved by using the fill layer 158 between the first layer 154and the protection layer 160.

In addition, the protection layer 160 is separated from the first layer154 by the second layer 156 and the fill layer 158. The fill layer 158is separated from the first layer 154 by the second layer 156.

The protection layer 160 has a first thickness T₁. In some embodiments,the first thickness T₁ is in a range from about 1 nm to about 20 nm. Ifthe thickness is too small, the protection effect is not good enough. Ifthe thickness is too large, the final gate height is too tall, whichleaded to large gate-to-source capacitance resulted in devicealternating current (AC) performance degradation.

Next, as shown in FIG. 5J, the insulating layer 162 is formed in thetrench 143 and on the protection layer 160 and on the gate dielectriclayer 152, in accordance with some embodiments of the disclosure. Theinsulating layer 162 includes a protruding portion in direct contactwith the gate dielectric layer 152.

In some embodiments, the insulating layer 162 is made of SiO₂, Si₃N₄,SiON, SiOCN, SiOCH or another applicable material. In some embodiments,the insulating layer 162 is formed by a chemical vapor deposition (CVD)process, physical vapor deposition (PVD) process, atomic layerdeposition (ALD) process, spin-on coating process, or another applicableprocesses.

Next, as shown in FIG. 5K, an etching stop layer 164 and a seconddielectric layer 166 are formed on the gate spacer layer 124 and theinsulating layer 162, in accordance with some embodiments of thedisclosure. An opening (not shown) is formed through the seconddielectric layer 166 and the etching stop layer 164 and the insulatinglayer 162, and then a barrier layer 168 and a conductive layer 170 isformed in the opening. A gate contact structure 172 includes a U-shapedbarrier layer 168 and the conductive layer 170, and the U-shaped barrierlayer 168 is in direct contact with the protection layer 160. The gatecontact structure 172 is through the insulating layer 162, the etchingstop layer 164 and the second dielectric layer 166. The gate contactstructure 172 is electrically connected to the gate structure 150 by theprotection layer 160.

In some embodiments, the barrier layer 168 is made of tantalum (Ta),tantalum nitride (TaN), titanium (Ti), titanium nitride (TiN), cobalttungsten (CoW) or another applicable material. In some embodiments, thebarrier layer 168 is made of Ti/TiN/W, and tungsten (W) in the barrierlayer 168 has a smaller grain size than the grain size of the conductivelayer 170 when the conductive layer 168 is made of tungsten (W).

In some embodiments, the barrier layer 168 is formed by a depositionprocess, such as a chemical vapor deposition (CVD) process, physicalvapor deposition (PVD) process, atomic layer deposition (ALD) process,plating process or another application process.

In some embodiments, the conductive layer 170 is made of tungsten (W),cobalt (Co), titanium (Ti), aluminum (Al), copper (Cu), tantalum (Ta),platinum (Pt), molybdenum (Mo), silver (Ag), manganese (Mn), zirconium(Zr), ruthenium (Ru), or another application material. In someembodiments, the conductive layer 170 is formed by a deposition process,such as a chemical vapor deposition (CVD) process, physical vapordeposition (PVD) process, atomic layer deposition (ALD) process, platingprocess or another application process.

If no protection layer over the gate structure 150, when the opening isformed through the insulating layer 162, the gate structure 150 may bedamaged. The protection layer provides an etching stop function toprotect the underlying gate structure 150 from being damaged. Since theprotection layer 160 may not tend to form on the first layer 154, thefirst layer 154 is separated from the protection layer 160 by the secondlayer 156 and the fill layer 158. The protection layer 160 is not indirect contact with the first layer 154 to make sure the formationquality of the protection layer 160.

It should be noted that the protection layer 160 is formed on the secondlayer 156 and the fill layer 158 to provide sufficient protection toprevent the underlying gate structure 150 form being damaged by anyetching process. In some embodiments, a first width of the bottomsurface of the protection layer 160 is greater than a second width ofthe top surface of the fill layer 158. The protection layer 160 is notonly have protection but also provide low gate resistance (Rg).Therefore, the performance of the semiconductor device structure 100 ais improved.

FIGS. 6A-6C show cross-sectional representations of various stages offorming a semiconductor device structure 100 b, in accordance with someembodiments of the disclosure. Processes and materials used to form thesemiconductor device structure 100 b may be similar to, or the same as,those used to form the semiconductor device structure 100 a and are notrepeated herein.

FIG. 6A is similar to FIG. 5G, the different between FIG. 6A and FIG. 5Gis that the second layer 156 in FIG. 6A is thicker than the second layer156 in FIG. 5G. The second layer 156 has a bottom portion and a sidewallportion, and the bottom portion is in direct contact with the firstlayer 154. The bottom portion is thicker than the sidewall portion.

Next, as shown in FIG. 6B, a portion of the gat dielectric layer 152, aportion of the second layer 156 and a portion of the fill layer 158 areremoved, in accordance with some embodiments of the disclosure. The filllayer 158 has a rectangular structure.

Afterwards, as shown in FIG. 6C, the gate contact structure 172 isformed on the protection layer 160. The gate contact structure 172 iselectrically connected to the gate structure 150 by the protection layer160. The protection layer 160 is separated from the first layer 154 bythe second layer 156 and the fill layer 158.

FIGS. 7A-7E show cross-sectional representations of various stages offorming the semiconductor device structure 100 c, in accordance withsome embodiments of the disclosure. Processes and materials used to formthe semiconductor device structure 100 c may be similar to, or the sameas, those used to form the semiconductor device structure 100 a and arenot repeated herein.

As shown in FIG. 7A, the gate dielectric layer 152 is formed in thetrench 143, and the first layer 154 is formed over the gate dielectriclayer 152, in accordance with some embodiments of the disclosure. Inaddition, the hard mask layer 155 is formed on a portion of the firstlayer 154. The hard mask layer 155 has a first portion formed in thetrench 143 and a second portion over the gate dielectric layer 124.

In some embodiments, the hard mask layer 155 is made of Ti, TiN, W, TaN,WN or another applicable materials. In some embodiments, the hard masklayer 155 is formed by using a chemical vapor deposition (CVD) process,physical vapor deposition (PVD) process, atomic layer deposition (ALD)process, another applicable process, or a combination thereof.

Afterwards, as shown in FIG. 7B, the dummy layer 153 is formed in thetrench 143 and over the first portion of the hard mask layer 155, inaccordance with some embodiments of the disclosure. The dummy layer 153is used to protect the underlying layers.

Next, as shown in FIG. 7C, a portion of the hard mask layer 155 isremoved, in accordance with some embodiments of the disclosure. Morespecifically, the second portion of the hard mask layer 155 over thegate spacer layer 124 is removed. The first portion of the hard masklayer 155 is remaining since it is covered by the dummy layer 153.Afterwards, the dummy layer 153 is removed by an etching process, suchas a wet etching process or a dry etching process.

Next, as shown in FIG. 7D, a portion of the first layer 154 is removedby using the hard mask layer 155 as a mask, in accordance with someembodiments of the disclosure. As a result, a portion of the gatedielectric layer 154 is exposed. The first layer 154 has a U-shapedstructure, and the hard mask layer 155 is formed in the recessed portionof the U-shaped structure.

Next, as shown in FIG. 7E, the hard mask layer 155 is removed, inaccordance with some embodiments of the disclosure. As a result, thefirst layer 154 has a U-shaped structure. Afterwards, the semiconductordevice structure of FIG. 7E proceeds the processes of the FIG. 5G-5K or6A-6C to obtain the semiconductor device structure 100 c. Thesemiconductor device structure 100 c is the same as or similar to thesemiconductor device structure 100 a or semiconductor device structure100 b.

FIGS. 8A-8I show cross-sectional representations of various stages offorming a semiconductor device structure 100 d, in accordance with someembodiments of the disclosure. Processes and materials used to form thesemiconductor device structure 100 d may be similar to, or the same as,those used to form the semiconductor device structure 100 a and are notrepeated herein.

As shown in FIG. 8A, the gate dielectric layer 152, the second layer156, and the first layer 154 are sequentially formed in the trench 143,in accordance with some embodiments of the disclosure. Note that thefirst layer 154 is formed after and over the second layer 156. Thetrench 143 is not completely filled with the first layer 154.

Afterwards, as shown in FIG. 8B, the hard mask layer 155 is formed onthe first layer 154, in accordance with some embodiments of thedisclosure.

Afterwards, as shown in FIG. 8C, a portion of the second layer 156 and aportion of the first layer 154 are removed by using the hard mask layer155 as a mask, in accordance with some embodiments of the disclosure.The top surface of the first layer 154 is substantially level with thetop surface of the second layer 156. The top surface of the first layer154, the top surface of the second layer 156 are substantially levelwith the top surface of the hard mask layer 155.

Afterwards, as shown in FIG. 8D, the hard mask layer 155 is removed, inaccordance with some embodiments of the disclosure. As a result, thefirst layer 154 and the second layer 156 respectively have a U-shapedstructure. The top surface of the first layer 154 is level with the topsurface of the second layer 156. There is a fourth depth D₄ measuredfrom the top surface of the second layer 156 to the bottom surface ofthe second layer 156. In some embodiments, the fourth depth D₄ is in arange from about 1 nm to about 10 nm.

Afterwards, as shown in FIG. 8E, the fill layer 158 is formed on thefirst layer 154 and the second layer 156, in accordance with someembodiments of the disclosure.

Next, as shown in FIG. 8F, a portion of the fill layer 158 and a portionof the gate dielectric layer 154 are removed, in accordance with someembodiments of the disclosure. As a result, the top surface of the gatedielectric layer 152 is lower than the top surface of the gate spacerlayer 124, and the top surface of the gate dielectric layer 152 issubstantially level with the top surface of the fill layer 158. Inaddition, the top surface of the fill layer 158 is higher than the topsurface of the first layer 152 and the top surface of the second layer156. The top surface of the first layer 154 is covered by the fill layer158.

The fill layer 158 has a T-shaped structure with a top horizontalportion and a bottom vertical portion. The top horizontal portion has asecond thickness T₂. In some embodiments, the second thickness T₂ is ina range from about 2 nm to about 20 nm.

Afterwards, as shown in FIG. 8G, the protection layer 160 is formed overthe fill layer 158, in accordance with some embodiments of thedisclosure. The protection layer is selectively formed on the fill layer158, but not formed on the gate dielectric layer 152. The protectionlayer 160 is not in direct contact with the first layer 154. Theprotection layer 160 is separated from the first layer 154 by the filllayer 158.

Next, as shown in FIG. 8H, the insulating layer 162 is formed on thegate dielectric layer 152 and the protection layer 160, in accordancewith some embodiments of the disclosure. The insulating layer 162 has aprotruding portion in direct contact with the sidewall of the protectionlayer 160.

Afterwards, as shown in FIG. 8I, the gate contact structure 172 isformed on the protection layer 160, in accordance with some embodimentsof the disclosure. The gate contact structure 172 is electricallyconnected to the gate structure 150 by the protection layer 160. In someembodiments, a first width of the bottom surface of the protection layer160 is equal to a second width of the top surface of the fill layer 158.

FIGS. 9A-9E show cross-sectional representations of various stages offorming a semiconductor device structure 100 e, in accordance with someembodiments of the disclosure. Processes and materials used to form thesemiconductor device structure 100 d may be similar to, or the same as,those used to form the semiconductor device structure 100 a and are notrepeated herein.

FIG. 9A is similar to FIG. 5A, the first layer 152 is formed over thegate dielectric layer 152, and the first layer 152 has a U-shapedstructure.

As shown in FIG. 9B, the fill layer 158 is formed over the first layer152 and in the trench 143, in accordance with some embodiments of thedisclosure.

As shown in FIG. 9C, a portion of the fill layer 158 and a portion ofthe gate dielectric layer 152 are removed, in accordance with someembodiments of the disclosure. The portion of the fill layer 158 and theportion of the gate dielectric layer 152 are removed by an etchingprocess, such as the dry etching process or wet etching process.

As shown in FIG. 9D, the protection layer 160 is selectively formed overthe fill layer 158, in accordance with some embodiments of thedisclosure. The protection layer 160 is separated from the first layer152 by the fill layer 158. The insulating layer 162 is formed over theprotection layer 160, and the insulating layer 162 is in direct contactwith the gate dielectric layer 152.

As shown in FIG. 9E, the gate contact structure 172 is formed over thegate structure 150, in accordance with some embodiments of thedisclosure. There is no second layer between the first layer 152 and thefill layer 158, but the first layer 152 is not in direct contact withthe protection layer 160. The fill layer 158 covers the top surface ofthe first layer 152, and the fill layer 158 is in direct contact withthe protection layer 160. More specially, the top surface of the filllayer 158 is in direct contact with the bottom surface of the protectionlayer 160.

Since the protection layer 160 is selectively formed on the second layer126 or the fill layer 158, but not on the first layer 152. The firstlayer 152 is covered by the second layer 156 or the fill layer 158.Therefore, the quality of the protection layer 160 can be improved. Itshould be noted that the protection layer 160 is in direct contact withthe second layer 156 and the fill layer 158 in the semiconductor devicestructure 100 a, 100 b, 100 c. The protection layer 160 is in directcontact with the fill layer 158 in the semiconductor device structure100 d, 100 e.

Embodiments for forming a semiconductor device structure and method forformation the same are provided. The semiconductor structure includes agate structure formed over a fin structure. A protection layer formedover the gate structure. The gate structure includes a first layer, asecond layer and a fill layer. The first layer is separated from theprotection layer by the fill layer, or by the second layer and the filllayer. The protection layer is selectively formed on the fill layer toprovide a protection to prevent the gate structure from being etched ordamaged. Therefore, the performance of semiconductor device structure isimproved.

In some embodiments, a semiconductor device structure is provided. Thesemiconductor device structure includes a fin structure formed over asubstrate, and a gate structure formed over the fin structure. The gatestructure includes a first layer, and a fill layer over the first layer.The gate structure includes a protection layer formed over the filllayer of the gate structure, and the protection layer is separated fromthe first layer by the fill layer.

In some embodiments, a semiconductor device structure is provided. Thesemiconductor device structure includes a fin structure formed over asubstrate, and the fin structure includes a plurality of nanostructures.The semiconductor device structure includes a gate structure formed overa topmost nanostructure of the nanostructures. The gate structureincludes a gate dielectric layer formed over the topmost nano structure,and a first conductive layer formed over the gate dielectric layer. Asecond conductive layer is formed over the gate dielectric layer, andthere is a fill layer over the first conductive layer and the secondconductive layer. The semiconductor device structure includes aprotection layer formed over the fill layer, and an insulating layerformed over the protection layer. The insulating layer includes aprotruding portion in direct contact with the gate dielectric layer.

In some embodiments, a method for forming a semiconductor devicestructure is provided. The method includes forming a fin structure overa substrate, and forming a dummy gate structure over the fin structure.The method includes forming a dielectric layer over the gate structure,and removing the dummy gate structure to form a trench in the dielectriclayer. The method also includes forming a gate dielectric layer in thetrench, and forming a first layer over the gate dielectric layer. Themethod further includes forming a fill layer over the first layer, andforming a protection layer over the fill layer. The protection layer isseparated from the first layer by the fill layer.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A semiconductor device structure, comprising: afin structure formed over a substrate; a gate structure formed over thefin structure, wherein the gate structure comprises: a first layer; anda fill layer over the first layer; a gate spacer layer formed adjacentto the gate structure; and a protection layer formed over the fill layerof the gate structure, wherein the protection layer is separated fromthe first layer by the fill layer, and a first width of a bottom surfaceof the protection layer is greater than or equal to a second width of atop surface of the fill layer, and a top surface of the protection layeris lower than a top surface of the gate spacer layer.
 2. Thesemiconductor device structure as claimed in claim 1, wherein the finstructure comprises a plurality of nanostructures.
 3. The semiconductordevice structure as claimed in claim 1, wherein the protection layer isnot in direct contact with the first layer.
 4. The semiconductor devicestructure as claimed in claim 1, further comprising: a second layerformed over the first layer, wherein the fill layer is formed over thefirst layer and the second layer.
 5. The semiconductor device structureas claimed in claim 4, wherein the fill layer is separated from thefirst layer by the second layer.
 6. The semiconductor device structureas claimed in claim 4, wherein a top surface of the second layer is indirect contact with a bottom surface of the protection layer.
 7. Thesemiconductor device structure as claimed in claim 4, wherein the filllayer is surrounded by the second layer and the protection layer.
 8. Thesemiconductor device structure as claimed in claim 1, furthercomprising: an insulating layer formed over the protection layer,wherein the insulating layer is in direct contact with a sidewall of theprotection layer.
 9. The semiconductor device structure as claimed inclaim 1, wherein the first layer is made of a Si-containing material, aAl-containing material, or a combination thereof.
 10. The semiconductordevice structure as claimed in claim 1, wherein the fill layer has aT-shaped structure or a rectangular structure.
 11. The semiconductordevice structure as claimed in claim 1, wherein the gate structurefurther comprises a gate dielectric layer, and the protection layer isnot formed on the gate dielectric layer.
 12. A semiconductor devicestructure, comprising: a fin structure formed over a substrate, whereinthe fin structure comprises a plurality of nanostructures; a gatestructure formed over a topmost nanostructure of the nanostructures,wherein the gate structure comprises: a gate dielectric layer formedover the topmost nanostructure of the nanostructures; a first conductivelayer formed over the gate dielectric layer; a second conductive layerformed over the gate dielectric layer; and a fill layer over the firstconductive layer and the second conductive layer; a protection layerformed over the fill layer; and an insulating layer formed over theprotection layer, wherein the insulating layer comprises a protrudingportion in direct contact with the gate dielectric layer, and anentirety of the insulating layer is higher than a top surface of thegate dielectric layer.
 13. The semiconductor device structure as claimedin claim 12, wherein the protection layer is separated from the firstconductive layer by the fill layer.
 14. The semiconductor devicestructure as claimed in claim 12, further comprising: a gate contactstructure formed over the protection layer, wherein the gate contactstructure is electrically connected to the gate structure by theprotection layer.
 15. The semiconductor device structure as claimed inclaim 12, wherein the gate structure further comprises a gate dielectriclayer, and the protection layer is not formed on the gate dielectriclayer.
 16. The semiconductor device structure as claimed in claim 12,wherein a top surface of the second conductive layer is higher than atop surface of the first conductive layer.
 17. A method for forming asemiconductor device structure, comprising: forming a fin structure overa substrate; forming a dummy gate structure over the fin structure;forming a dielectric layer over the dummy gate structure; removing thedummy gate structure to form a trench in the dielectric layer; forming agate dielectric layer in the trench; forming a first layer over the gatedielectric layer; forming a fill layer over the first layer; forming aprotection layer over the fill layer, wherein the protection layer isseparated from the first layer by the fill layer; and forming a gatecontact structure on the protection layer, wherein a bottom surface ofthe gate contact structure is in direct contact with a top surface ofthe protection layer.
 18. The method for forming the semiconductordevice structure as claimed in claim 17, further comprising: forming asecond layer over the gate dielectric layer, wherein the fill layer isseparated from the first layer by the second layer.
 19. The method forforming the semiconductor device structure as claimed in claim 17,wherein the fin structure comprises a plurality of first semiconductorlayers and a plurality of second semiconductor layers, and the firstsemiconductor layers and the second semiconductor layers are alternatelystacked, and the method comprises removing the second semiconductorlayers to form a gap, and the gate dielectric layer is formed in thegap.
 20. The method for forming the semiconductor device structure asclaimed in claim 17, further comprising: selectively forming theprotection layer on the fill layer, wherein the protection layer is notformed on the gate dielectric layer.